Large area depositon of Cd1-xZnxTe on GaAs and Si substrates by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Large area depositon of Cd1-xZnxTe on GaAs and Si substrates by metalorganic chemical vapor deposition

Published:1995-05 Issue:5 Volume:24 Page:483-489
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Karam N. H.,Sudharsanan R.,Mastrovito A.,Sanfacon M. M.,Smith F. T. J.,Leonard M.,El-Masry N. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02657951.pdf

Reference18 articles.

1. See for example Proc. U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Novel Infrared Detector Materials,J. Vac. Sci. and Tech. B 9 (3), (1991);J. Vac. Sci. and Tech. B 10 (4), (1992).

2. J. Vac. Sci. and Tech. B 10 (4), (1992).

3. Proc. U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Novel Infrared Detector Materials,J. of Electron. Mater. 22 (8), (1993).

4. K. Zanio, R. Bean, R. Matson, P. Vu, S. Taylor, D. McIntyre, C. Ito and M. Chu,Appl. Phys. Lett. 56, 1207 (1990).

5. R. Korenstein, P. Madison and P. Hallock,J. Vac. Sci. Technol. B 10, 1370 (1992).

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