The progress in MOCVD and MBE in China-Reference-Cited by-同舟云学术

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The progress in MOCVD and MBE in China

Published:1991-08 Issue:3 Volume:70 Page:217-230
ISSN:0231-4428
Container-title:Acta Physica Hungarica
language:en
Short-container-title:Acta Physica Hungarica

Author:

Rui-wu Peng,Mei-ying Kong,Yi-xin Jin

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/BF03156269.pdf

Reference49 articles.

1. Peng Rui-wu, Xi You Jin Shu, Rare Metals,12, 290, 1988.

2. Peng Rui-wu, Zong Jia-ting, Zhai Qi-gang, Ren Yao-cheng and Ding Young-qing, Proc. of 1987 Natl. Symp. on GaAs and Related Compounds, Beijing, 1987, p. 41.

3. Liang Bing-wen, Ding Young-qing, Lu Feng-zhen and Peng Rui-wu, Rare Metals,6, 263, 1987.

4. T. Soga, Y. Takahashi, S. Sakai and M. Umeno, J. Cryst. Growth,68, 169, 1984.

5. Ren Yao-cheng, Wang Le and Peng Rui-wu, in extended abstract of “1st Natl. Symp. on MOCVD”, Anhui, 1989, p. 260.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reaction kinetics control in preparation of CdTe and HgCdTe by hot wall metalorganic vapor phase epitaxy;Journal of Electronic Materials;1994-02

2. Growth kinetics of GaSb by metalorganic vapor phase epitaxy;Journal of Electronic Materials;1994-02

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