Effect of the silicon substrate structure on chip spiral inductor

Author:

Xue Chunlai,Yao Fei,Cheng Buwen,Wang Qiming

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Taub S R, Alterovitz S A. Silicon technologies adjust to RF applications. Microwave and RF, 1994, 33(10): 60–74

2. Larson L E. Integrated circuit technology options for RFICs present status and future directions. IEEE Journal of Solid-State Circuits, 1998, 33(3): 387–399

3. Ozgur M, Zaghloul M E, Gaitan M. Optimization of backside micromachined CMOS inductors for RF applications. IEEE International Symposium on Circuits and Systems, Geneva, Switzerland. 2000, 5: 185–188

4. Rieh J S, Lu L H, Katehi L P B, et al. X-and Ku-band amplifiers based on Si/SiGe HBT’s and micromachined lumped components. IEEE Transactions on Microwave Theory and Techniques, 1998, 46(5): 685–694

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