1. F. Monteverde, A. Bellosi, and S. Guicciardi, “Processing and properties of zirconium diboride based composite,” J. Eur. Ceram. Soc., 22, No. 3, 279–288 (2002).
2. N. S. Boltovets, V. N. Ivanov, R. V. Konakova, et al., “SiC Schottky-barrier diodes formed with TiB(x) and ZrB(x) amorphous layers,” Semicond. Phys. Quantum Electron. Optoelectron., 7, No. 1, 60–62 (2004).
3. V. M. Talash, “Mechanisms of forming oxide nanofilms on diborides of transition metals of group 4 in electrochemical oxidation,” Dop. NAN Ukrainy, No. 11, 81–84 (2010).
4. K. S. Kumar, “Silicides: science, technology and application,” in: J. H. Westbrook (ed.), Intermetallic Compounds, Vol. 2, Practice, Wiley, New York (1994), pp. 211–235.
5. Yu. A. Chaplygin (ed.), Nanotechnologies in Electronics [in Russian], Tekhnosfera, Moscow (2005), p. 446.