Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology-Reference-Cited by-同舟云学术

Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology

Published:2008-12 Issue:3-4 Volume:1 Page:336-340
ISSN:1674-4128
Container-title:Frontiers of Optoelectronics in China
language:en
Short-container-title:Front. Optoelectron. China

Author:

Li Xianjie,Zhao Yonglin,Cai Daomin,Zeng Qingming,Pu Yunzhang,Guo Yana,Wang Zhigong,Wang Rong,Qi Ming,Chen Xiaojie,Xu Anhuai

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s12200-008-0059-4.pdf

Reference7 articles.

1. Bitter M, Bauknecht R, Hunziker W, et al. Monolithically integrated 40-Gb/s InP/InGaAs PIN/HBT optical receiver module. In: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials, Davos. IEEE Press, 1999: 381–384

2. Huber D, Bitter M, Dülk M, et al. A 53 GHz monolithically integrated InP/InGaAs PIN/HBT receiver OEIC with an electrical bandwidth of 63 GHz. In: Proceedings of the 12th International Conference on Indium Phosphide and Related Materials, Williamsburg. IEEE Press, 2000: 325–328

3. Mekonnen G G, Bach H G, Beling A, et al. 80-Gb/s InP-based waveguide-integrated photoreceiver. IEEE Journal of Selected Topics in Quantum Electronics, 2005, 11(2): 356–360

4. Gutierrez-Aitken A L, Yang K, Zhang X, et al. 16-GHz bandwidth InAlAs-InGaAs monolithically integrated PIN/HBT photoreceiver. IEEE Photonics Technology Letters, 1995, 7(11): 1339–1341

5. Ao J P, Liu W J, Li X J, et al. Long wavelength monolithic integrated photoreceiver. Semiconductor Optoelectronics, 2002, 23(1): 26–28 (in Chinese)