Charge trapping memory devices employing multi-layered Ge/Si nanocrystals for storage fabricated with ALD and PLD methods
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12200-011-0156-7.pdf
Reference8 articles.
1. Tiwari S, Rana F, Hanafi H, Hartstein A, Crabbe E F, Chan K. A silicon nanocrystals based memory. Applied Physics Letters, 1996, 68(10): 1377–1379
2. Shi Y, Saito K, Ishikuro H, Hiramoto T. Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals. Journal of Applied Physics, 1998, 84(4): 2358–2360
3. Zhu Y, Zhao D T, Liu J L. Numerical investigation of transient capacitances of Ge/Si heteronanocrystal memories in retention mode. Journal of Applied Physics, 2007, 101(3): 034508
4. Lu J, Zuo Z, Chen Y B, Shi Y, Pu L, Zheng Y D. Charge storage characteristics in metal-oxide-semiconductor memory structure based on gradual Ge1–xSix/Si heteronanocrystals. Applied Physics Letters, 2008, 92(1): 013105
5. Tan Y N, Chim W K, Choi W K, Joo M S, Cho B J. Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation. IEEE Transactions on Electron Devices, 2006, 53(4): 654–662
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