High-performance and current crowding-free InGaN-GaN-based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN-Reference-Cited by-同舟云学术

High-performance and current crowding-free InGaN-GaN-based LEDs integrated by an electrically-reverse-connected Schottky diode and a Mg-delta doped p-GaN

Published:2012-05-06 Issue:2 Volume:5 Page:127-132
ISSN:2095-2759
Container-title:Frontiers of Optoelectronics
language:en
Short-container-title:Front. Optoelectron.

Author:

Kim Sei-Min,Jang Seon-Ho,Jang Ja-Soon

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s12200-012-0256-z.pdf

Reference22 articles.

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2. Pearton S J, Zolper J C, Shul R J, Ren F. GaN: processing, defects, and devices. Journal of Applied Physics, 1999, 86(1): 1–78

3. Guo X, Schubert E F. Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates. Applied Physics Letters, 2001, 78(21): 3337

4. Wu J Q. When group-III nitrides go infrared: new properties and perspectives. Journal of Applied Physics, 2009, 106(1): 011101

5. Sheu J K, Chi G C, Jou M J. Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice. IEEE Electron Device Letters, 2001, 22(4): 160–162

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1. Improvement in the Light Extraction of Blue InGaN/GaN-Based LEDs Using Patterned Metal Contacts;IEEE Journal of the Electron Devices Society;2014-03

2. Electrical, optical, and structural characteristics of ohmic contacts between p-GaN and ITO deposited by DC- and RF-magnetron sputtering;Electronic Materials Letters;2013-07

3. Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped Hole Injection Layer;Journal of Display Technology;2013-04