Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics
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Published:2023-10-27
Issue:1
Volume:16
Page:
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ISSN:2095-2767
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Container-title:Frontiers of Optoelectronics
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language:en
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Short-container-title:Front. Optoelectron.
Author:
He Jungang,Ge You,Wang Ya,Yuan Mohan,Xia Hang,Zhang Xingchen,Chen Xiao,Wang Xia,Zhou Xianchang,Li Kanghua,Chen Chao,Tang Jiang
Abstract
AbstractLead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as the electron transport layer (ETL). However, it is found that the surface defects of ZnO present a difficulty in completion of passivation, and this impedes the continuous progress of devices. To address this disadvantage, fluoride (F) anions are employed for the surface passivation of ZnO through a chemical bath deposition method (CBD). The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment. Benefiting from these improvements, PbSe CQD PVs report an efficiency of 10.04%, comparatively 9.4% higher than that of devices using sol-gel (SG) ZnO as ETL. We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices.
Graphical Abstract
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
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