Factors influencing the dressing rate of chemical mechanical polishing pad conditioning-Reference-Cited by-同舟云学术

Factors influencing the dressing rate of chemical mechanical polishing pad conditioning

Published:2006-05-09 Issue:7-8 Volume:33 Page:720-724
ISSN:0268-3768
Container-title:The International Journal of Advanced Manufacturing Technology
language:en
Short-container-title:Int J Adv Manuf Technol

Author:

Tso Pei-Lum,Ho Shuo-Young

Publisher

Springer Science and Business Media LLC

Subject

Industrial and Manufacturing Engineering,Computer Science Applications,Mechanical Engineering,Software,Control and Systems Engineering

Link

http://link.springer.com/content/pdf/10.1007/s00170-006-0501-y.pdf

Reference3 articles.

1. Li W, Shin DW, Tomozawa M, Murarka SP (1995) The effect of the polishing pad treatments on the chemical–mechanical polishing of SiO2 films. Thin Solid Films 270:601–606

2. Kim H-Y, Park J-H, Jeong H-D (2001) A study of the abrasive pad for CMP. In: Advances in Abrasive Technology IV. Department of Precision Mechanical Engineering, Pusan National University, South Korea, pp 263–270

3. Sung J, Pai YL (2000) CMP pad dresser: a diamond grid solution. In: Advances in Abrasive Technology III. The Society of Grinding Engineers, pp 189–196

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