Modal analysis of multi-layer structure for chemical mechanical polishing process

Author:

Chiu Jinn-Tong,Lin Yeou-Yih

Publisher

Springer Science and Business Media LLC

Subject

Industrial and Manufacturing Engineering,Computer Science Applications,Mechanical Engineering,Software,Control and Systems Engineering

Reference13 articles.

1. Runnels SR, Renteln P (1993) Modeling the effect of polish pad deformation on wafer surface stress distributions during chemical-mechanical polishing. In: Herndon, TO (ed) Proceedings of the symposia on interconnects, contact metallization, and multilevel metallization and reliability for semiconductor devices, interconnects, and thin insulator materials, Electrochemical Society, New Jersey, USA, pp 110–121

2. Runnels SR, Eyman LM (1994) Tribology analysis of chemical-mechanical polishing. J Electrochem Soc 141(6):1698–1701

3. Kaanta CW, Landis HS (1991) Radial uniformity control of semiconductor wafer polishing. US Patent 5,036,630, 6 August 1991

4. Warnock J (1991) A two-dimensional process model for CMP planarization. J Electrochem Soc 138(8):2398–2402

5. Sivaram S, Tolles R, Bath H, Lee E, Leggett R (1992) Chemical mechanical polishing of inter-level dielectrics: models for removal rate and planarity. Technical Report, SEMATECH, Austin, Texas

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