Study on material removal mechanism and surface formation characteristics of reaction-bonded silicon carbide by electrical discharge grinding technology-Reference-Cited by-同舟云学术

Study on material removal mechanism and surface formation characteristics of reaction-bonded silicon carbide by electrical discharge grinding technology

Published:2024-06-13 Issue:7-8 Volume:133 Page:3355-3366
ISSN:0268-3768
Container-title:The International Journal of Advanced Manufacturing Technology
language:en
Short-container-title:Int J Adv Manuf Technol

Author:

Deng Shibo,Dai Longzhou,Wu Mingtao

Funder

Young Fund of National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s00170-024-13904-1.pdf

Reference31 articles.

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3. Li Z, Zhang F, Luo X (2018) Subsurface damages beneath fracture pits of reaction-bonded silicon carbide after ultra-precision grinding. Appl Surf Sci 448:341–350. https://doi.org/10.1016/j.apsusc.2018.04.038

4. Yan J, Zhang Z, Kuriyagawa T (2009) Mechanism for material removal in diamond turning of reaction-bonded silicon carbide. Int J Mach Tools Manuf 49(5):366–374. https://doi.org/10.1016/j.ijmachtools.2008.12.007

5. Jalluri T, Gouda GM, Dey A et al (2022) Development and characterization of silicon dioxide clad silicon carbide optics for terrestrial and space applications. Ceram Int 48:96–110. https://doi.org/10.1016/j.ceramint.2021.09.085