1. H. Melchior in: Laser Handbook, Bd. 1 (Hg. F.T. Arecchi, E.O. Schulz-Dubois), North-Holland Publ. Comp., Amsterdam 1972.
2. B. Eitan et al., Impact ionization at very low voltages in silicon, J. Appl. Phys. 53, 1244, 1982.
3. G.E. Stillman, C.M. Wolfe, Avalanche Photodiodes, in Semiconductors and Semimetals (Hg. R. K. Willardson, A.C. Beer), Bd. 12, Academic Press, New York 1977.
4. A. Schlachetzki, Physics and Application of the Semiconductor InGaAsP, in Physics of Semiconductor Devices (Hg. S.C. Jain, S. Radhakrishna) , Wiley Eastern Ltd., New Delhi 1982.
5. N. Mazumder et al., A study of the ionization rates of electrons and holes in GaAs using a computer analysis of the properties of GaAs IMPATTs, J. Appl. Phys. 52, 5855, 1981.