Mikrowellen-Feldeffekttransistoren
Author:
Schlachetzki Andreas
Publisher
Vieweg+Teubner Verlag
Reference12 articles.
1. J.A. Cooper, Limitations on the Performance of Field-Effect Devices for Logic Applications, Proc. IEEE 69, 226, 1981. 2. S. Hiyamizu, T. Mimura, T. Ishikawa, MBE-Grown GaAs/N-AlGaAs Heterostructures and Their Application to High Electron Mobility Transistors, Japan. J.Appl. Phys. 21, Suppl. 21–1, 161, 1982. 3. M. Inoue, S. Hiyamizu, M. Inayama, Y. Inuishi, Analyses of 2D Electron Transport at a GaAs/AlGaAs Interface, ibid. Suppl. 22–1, 357, 1983. 4. M. Abe, T. Mimura, N. Yokoyama, H. Ishikawa, New Technology Towards GaAs LSI/VLSI for Computer Applications, IEEE Trans. Microwave Theory and Techniques MTT-30, 992, 1982. 5. M.S. Shur, Analytical Model of GaAs MESFET’s, IEEE Trans. Electron Dev. ED-25, 612, 1978.
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