Basics of Silicon-on-Insulator (SOI) Technology
Author:
Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-662-10827-7_2
Reference78 articles.
1. Nishimura T, Inoue Y, Sugahara K, Kusunoki S, Kumamoto T, Nakagawa S, Nakaya M, Horiba Y, Akasaka Y (1987) Three dimensional IC for high performance image signal processor. Technical Digest of the International Electron Devices Meeting: 111-114
2. Denton JP, Neudeck GW (1996) Fully depleted dual-gated thin-film SOI P-MOSFETs fabricated in SOI islands with an isolated buried polysilicon backgate. IEEE Electron Device Letters 17: 509–511
3. Izumi K, Doken M, Ariyoshi H (1978) CMOS devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon. Electronics Letters 14: 593–594
4. Krause S, Anc M, Roitman P (1988) Evolution and future trends of SIMOX material. MRS Bulletin 23: 25–29
5. Desmond CA, Gösele U (1988) Wafer-bonding and thinning technologies. MRS Bulletin 23: 30–34
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