Author:
Kellner Walter,Kniepkamp Hermann
Publisher
Springer Berlin Heidelberg
Reference33 articles.
1. Liechti, C. A.: Microwave field-effect transistors 1976. IEEE Trans. MTT-24 (1976) 279–300.
2. Oakes, J. G.; Wickstrom, R. A.; Tremere, D. A.; Heng, T. M. S.: A power silicon MOS transistor. IEEE Trans. MTT-24 (1976) 305–311.
3. Sigg, H. J.; Vendelin, G. D.; Cauge, T. P.; Kocsis, I.: D-MOS transistor for microwave application. IEEE Trans. ED-19 (1972) 45–53.
4. Ronen, R.; Strauss, L.: The silicon-on-sapphive MOS tetrode, some small signal features LF to UHF. IEEE Trans. ED-21 (1974) 100–109.
5. Teszner, S.: Gridistor development for the microwave power region. IEEE Trans. ED-19 (1972) 355–364.