1. Mead, C. A.: Schottky barrier gate field-effect transistor. Proc. IEEE (Lett.) 54 (1966) 307–308.
2. Turner, J. A.: GaAs field-effect transistors. Inst. Phys. Conf. Ser. 3 (1966) 213–218.
3. Winteler, H. R.; Steinemann, A.: GaAs field effect transistors. Inst. Phys. Conf. Ser. No. 3 (1966) 228–232.
4. Turner, J. A.; Waller, A. J.; Bennett, R.; Parker, D.: An electron beam fabricated GaAs microwave field-effect transistor. Inst. Phys. Conf. Ser. 9 (1970) 234–239.
5. Baechtold, W.; Daetwyler, K.; Forster, T.; Mohr, T. O.; Walter, W.; Wolf, P.: Si and GaAs 0,5 μm — gate Schott-ky-barrier field-effect transistors. Electron. Lett. 9 (1973) 232–234.