Conclusions and Outlook
Publisher
Springer Berlin Heidelberg
Reference7 articles.
1. Sun, J.D., Sun, Y.F., Wu, D.M., Cai, Y., Qin, H., Zhang, B.S.: High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor. Appl. Phys. Lett. 100, 013506 (2012) 2. Sun, J.D., Qin, H., Lewis, R.A., Sun, Y.F., Zhang, X.Y., Cai, Y., Wu, D.M., Zhang, B.S.: Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector. Appl. Phys. Lett. 100, 173513 (2012) 3. Sun, Y.F., Sun, J.D., Zhou, Y., Tan, R.B., Zeng, C.H., Xue, W., Qin, H., Zhang, B.S., Wu, D.M.: Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas. Appl. Phys. Lett. 98, 252103 (2011) 4. Sun, J.D., Sun, Y.F., Zhou, Y., Zhang, Z.P., Lin, W.K., C.H., Zeng, Wu, D.M., Zhang, B.S., Qin, H., Li, L.L., Xu, W.: Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN HEMT detectors. AIP Conf. Proc. 1399, 893 (2011) 5. Zhou, Y., Sun, J.D., Sun, Y.F., Zhang, Z.P., Lin, W.K., Lou, H.X., Zeng, C.H., Lu, M., Cai, Y., Wu, D.M., Lou, S.T., Qin, H., Zhang, B.S.: Characterization of a room temperature terahertz detector based on a GaN/AlGaN HEMT. J. Semicond. 32(4), 064005 (2011)
|
|