1. Amerasekera E.A., Campbell D.S.: Failure Mechanisms in Semiconductor Devices. New York a.o.: Wiley, 1987.
2. Anderson W.T. a.o.: GaAs FET failure mechanisms due to high humidity and ionic contamination. IEEE Trans. Rel. 29 (1980) 3, pp. 222–231.
3. Bajanesco T.I.: Zuverlässigkéit elektronischer Komponenten. Berlin u.a.: VDE-Verlag, 1985.
4. Barber M.R.: Fundamental timing problems in testing MOS VLSI on modem ATE. IEEE. Design and Test, Aug. 1984, pp. 90–97.
5. Barbottin G., Vapaille A., (Eds.): Instabilities in Silicon Devices. Amsterdam a.o.: North-Holland, 1986.