1. Anderson W.T. et al.: GaAs FET failure mechanisms due to high humidity and ionic contamination. IEEE Trans. Rel. R, 29(1980)3, 5. 222–231.
2. Bíjenesco T.I.: Problèmes de la fiabilité des composants électroniques actifs actuelS. Paris: Masson, 1980.
3. Beck F. et al.: Ausfallursachen von Speicher IC’s in frühen Zeitbereich. NTG-Fachtagung Grossintegration. Baden-Baden, 7.-9. 3. 1983, S. 87–90.
4. Benedini I. et al.: Reliability evaluation of LSI memories for long life applicationS. 4th Int.Conf.on Rel.& Maint., Perros-Guirec, 21.-25.5.1984. Lannion: CNET, 1984, S. 33–42.
5. Bertotti D. et al.: Investigation of information loss mechanisms in EPROMS. Microel.& Rel. 23(1983)4, S. 717–743.