Injection lasers based on AlGaAsSb/GaSb and InGaAsSb/GaSb heterostructures-Reference-Cited by-同舟云学术

Injection lasers based on AlGaAsSb/GaSb and InGaAsSb/GaSb heterostructures

Published:1984 Issue:3 Volume:5 Page:349-362
ISSN:0270-2010
Container-title:Journal of Soviet Laser Research
language:en
Short-container-title:J Russ Laser Res

Author:

Dolginov M. L.,Drakin A. E.,Druzhinina L. V.,Eliseev P. G.,Mil'vidskii M. G.,Sverdlov B. N.,Skripkin V. A.

Publisher

Springer Science and Business Media LLC

Subject

Engineering (miscellaneous),Atomic and Molecular Physics, and Optics,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/BF01120625.pdf

Reference22 articles.

1. V. V. Bezotosnyi, A. P. Bogatov, L. M. Dolginov, A. E. Drakin, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov, and E. G. Shevchenko, ?Injection heterlasers based on GaIn·PAs/InP,? Trudy FIAN,141, 18, (1983 (this issue).

2. L. M. Dolginov, P. G. Eliseev, L. V. Druzhinina, M. G. Mil'vidskii and B. N. Sverdlov, ?New uncooled injection heterolaser in the 1.5-to 1.8-?m band,? Kvantovaya Élektron. (Moscow),3, 465?466 (1976).

3. Ya. A. Aarik, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, P. A. Lyuk, B. N. Sverdlov, V. A. Skripkin, and Ya. K. Fridental, ?Properties of injection heterolasers based on AlGaAsSb/GaSb in the wavelength band1.4?1.8 ?m,? Kvantovaya Élektron. (Moscow),7, 91?96 (1980).

4. L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, A. P. Lapshin, M. G. Mil'vidskii, and B. N. Sverdlov, ?Injection laser based on the solid solution InGaSbAs,? Kvantovaya Élektron. (Moscow),5, 720 (1978).

5. L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, M. G. Mil'vidskii, B. N. Sverdlov, and E. G. Shevchenko, ?Luminescent properties of heterostructures, and light-emitting diodes based on multicomponent solid solutions for the 1-to2-?m band,? Krat. Soobshch. Fiz. FIAN, No. 8, 20?33 (1976).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Mapping of Nonequilibrium Charge Carriers;The Journal of Physical Chemistry C;2021-07-02

2. Active layer assessment of AlxGa1-xAsySb1-y/GaSb diode lasers from hydrostatic pressure measurements;Semiconductor Science and Technology;1990-08-01