Deep levels subsisting in ion implanted silicon after various transient thermal annealing procedures-Reference-Cited by-同舟云学术

Deep levels subsisting in ion implanted silicon after various transient thermal annealing procedures

Published:1983-07 Issue:3 Volume:31 Page:147-152
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Mesli A.,Muller J. C.,Siffert P.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00624720.pdf

Reference21 articles.

1. J. C. Muller, P. Siffert: Radiat. Eff.63, 81 (1982)

2. J. B. Mitchell, J. A. Davies, L. M. Howe, R. S. Walker, K. B. Winterbon, G. Foti, J. A. Moore: InIon Implantation Science and Technology, ed. by O. Namba (Plenum Press, London 1975)

3. J. A. Davies, G. Foti, L. M. Howe, J. B. Mitchell, K. B. Winterbon: Phys. Rev. Lett.34, 1441 (1975)

4. F. Zignani, R. Galloni, L. Pedulli, G. G. Bentini, M. Servidari, M. Cembali, A. Desalvo: European Photovoltaïc Solar Energy Conference, ed. by R. Van Overstraeden and W. Paltz (Reidel, Dordrecht 1979) p. 145

5. J. C. Muller, J. J. Grob, R. Stuck, P. Siffert: Appl. Phys. Lett.33, 287 (1978)

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