Variability in nanoscale CMOS technology

Author:

Kuhn Kelin

Publisher

Springer Science and Business Media LLC

Subject

General Computer Science

Reference30 articles.

1. Kuhn K. CMOS transistor scaling past 32 nm. In: Advanced Semiconductor Manufacturing Conference, ASMC, 2010

2. Wang Y, Bhattacharya U, Hamzaoglu F, et al. A 4.0 GHz 291 Mb voltage-scalable SRAM design in 32 nm high-κ metal-gate CMOS with integrated power management. In: IEEE International Solid-State Circuits Conference, 2009. ISSCC, 2009

3. Kuhn K, Kenyon C, Kornfeld A, et al. Managing process variation in intel’s 45 nm CMOS technology. Intel Tech J, 2008, 12: 93–110

4. Capodieci L. From optical proximity correction to lithography-driven physical design (1996–2006): 10 years of resolution enhancement technology and the roadmap enablers for the next decade. In: Proceedings SPIE, Volume 6154, 615401

5. Asenov A, Kaya S, Brown A R. Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness. IEEE Trans Electr Dev, 2003, 50: 1254–1260

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