Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology-Reference-Cited by-同舟云学术

Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology

Published:2023-10-20 Issue:11 Volume:66 Page:
ISSN:1674-733X
Container-title:Science China Information Sciences
language:en
Short-container-title:Sci. China Inf. Sci.

Author:

Shi Hangning,Yi Ailun,Ding Jiaxin,Liu Xudong,Qin Qingcheng,Yi Juemin,Hu Junjie,Wang Miao,Cai Demin,Wang Jianfeng,Xu Ke,Mu Fengwen,Suga Tadatomo,Heller René,Wang Mao,Zhou Shengqiang,Xu Wenhui,Huang Kai,You Tiangui,Ou Xin

Publisher

Springer Science and Business Media LLC

Subject

General Computer Science

Link

https://link.springer.com/content/pdf/10.1007/s11432-022-3668-0.pdf

Reference4 articles.

1. Then H W, Radosavljevic M, Jun K, et al. Gallium nitride and silicon transistors on 300 mm silicon wafers enabled by 3-D monolithic heterogeneous integration. IEEE Trans Electron Dev, 2020, 67: 5306–5314

2. Shi H, Huang K, Mu F, et al. Realization of wafer-scale single-crystalline GaN film on CMOS-compatible Si(100) substrate by ion-cutting technique. Semicond Sci Technol, 2020, 35: 125004

3. Huang K, You T, Jia Q, et al. Defects induced by MeV H+ implantation for exfoliating of free-standing GaN film. Appl Phys A, 2018, 124: 118

4. Moutanabbir O, Scholz R, Gösele U, et al. Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN. Phys Rev B, 2010, 81: 115205

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