Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
https://link.springer.com/content/pdf/10.1007/s11432-022-3721-0.pdf
Reference5 articles.
1. Zhou J, Han G, Li Q, et al. Ferroelectric HfZrOx Ge and GeSn PMOSFETs with sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco, 2016
2. Li J, Zhou J, Han G, et al. Negative capacitance Ge PFETs for performance improvement: impact of thickness of HfZrOx. IEEE Trans Electron Devices, 2018, 65: 1217–1222
3. Liu H, Wang C, Han G, et al. ZrO2 ferroelectric FET for non-volatile memory application. IEEE Electron Device Lett, 2019, 40: 1419–1422
4. Wang Z, Ying H, Chern W, et al. Cryogenic characterization of a ferroelectric field-effect-transistor. Appl Phys Lett, 2020, 116: 042902
5. Wang C, Wu J, Yu H, et al. Effects of temperature on the performance of Hf0.5Zr0.5O2-based negative capacitance FETs. IEEE Electron Device Lett, 2020, 41: 1625–1628
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1. Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition;Journal of Semiconductors;2024-03-01
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