A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
http://link.springer.com/content/pdf/10.1007/s11432-020-3155-7.pdf
Reference9 articles.
1. Tang H W, Zhang H M, Chen X Y, et al. Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides. Sci China Inf Sci, 2019, 62: 220401
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3. Qiu H, Xu T, Wang Z, et al. Hopping transport through defect-induced localized states in molybdenum disulphide. Nat Commun, 2013, 4: 2642
4. Fang N, Toyoda S, Taniguchi T, et al. Full energy spectra of interface state densities for n- and p-type MoS2 field-effect transistors. Adv Funct Mater, 2019, 29: 1904465
5. Jiménez D. Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors. Appl Phys Lett, 2012, 101: 243501
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