Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s11432-023-3940-x.pdf
Reference5 articles.
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2. Bajaj S, Allerman A, Armstrong A, et al. High Al-content AlGaN transistor with 0.5 A/mm current density and lateral breakdown field exceeding 3.6 MV/cm. IEEE Electron Dev Lett, 2018, 39: 256–259
3. Zhu J, Jing S, Ma X, et al. Improvement of electron transport property and on-resistance in normally-OFF Al2O3/AlGaN/GaN MOS-HEMTs using post-etch surface treatment. IEEE Trans Electron Dev, 2020, 67: 3541–3547
4. Chu R, Zhou Y, Liu J, et al. AlGaN-GaN double-channel HEMTs. IEEE Trans Electron Dev, 2005, 52: 438–446
5. Ando Y, Ishikura K, Yamanoguchi K, et al. Theoretical and experimental study of inverse piezoelectric effect in AlGaN/GaN field-plated heterostructure field-effect transistors. IEEE Trans Electron Dev, 2012, 59: 3350–3356
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