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Reference59 articles.
1. Kilby J. Semiconductor Device. US Patent 3,643,138
2. Dennard R H. Field-Effect Transistor Memory. US Patent 3,387,286
3. Moore G E. Cramming more components onto integrated circuits. Electronics, 1965, 38: 114–117
4. Hsiao Y H, Lue H T, Hsu T H, et al. A critical examination of 3D stackable NAND flash memory architectures by simulation study of the scaling capability. In: IEEE International Memory Workshop, IMW. 2010. 2010. 5488390
5. Raoux S, Burr G. W, Breitwisch M J, et al. Phase change random access memory: a scalable technology. IBM J Res Dev, 2008, 52: 465–480
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