Author:
He YanDong,Zhang Xing,Wang YangYuan
Publisher
Springer Science and Business Media LLC
Reference13 articles.
1. Stathis J H. Reliability limits for gate insulator in CMOS technology. IBM J Res Dev, 2002, 46: 265–286
2. Taur Y, Nowak E J. CMOS devices below 0.1um: how high will performance go. In: IEDM Tech Dig. Washington, 1997. 215–218
3. Ito T, Nakamura T, Ishikawa H. Advantages of thermal nitrider and nitroixde gate films in VLSI process. IEEE Trans Electron Dev, 1982, 29: 498–503
4. Kamgar A, Clemems J T, Ghetti A, et al. Reduced electron mobility due to nitrogen implant prior to the gate oxide growth. IEEE Electr Device L, 2000, 21: 227–229
5. Gusev E P, Lu H C, Garfunkel E, et al. Nitrogen engineering of ultra-thin oxynitrides by a thermal NO/O2/NO process. J Appl Phys, 1998, 84: 2980–2982