Zur Physik der PIN-Diode bei hohen Frequenzen

Author:

Weitzsch F.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,Applied Mathematics,Electrical and Electronic Engineering

Reference6 articles.

1. Firle, T. E., Hayes, O. E.: Some reactive effects in forward biased junctions. IRE-Trans. ED 6 (1959) 7, 330–334.

2. Ladany, I.: Analysis of inertial inductance in a junction diode. IRE-Trans. ED 7 (1960) 10, 303–310.

3. Nordman, J. E., Greiner, R. A.: The small-signal inductive effect in a long P-I-N diode. IEEE-Trans. ED 10 (1963) 5, 171–177.

4. Leenov, D.: The silicon PIN-diode as a microwave radar protector at megawatt levels. IEEE-Trans ED 11 (1964) 2, 53–61.

5. Prima, N. A., Tkhorik, Yu. A.: Total impedance of a p-i-n diode at high injection levels. Soviet physics-semiconductors 1 (1967) 4, 444–449.

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