Hydrogen in semiconductors: The roles of μSR and theory-Reference-Cited by-同舟云学术

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Hydrogen in semiconductors: The roles of μSR and theory

Published:1994-12 Issue:1 Volume:86 Page:625-637
ISSN:0304-3834
Container-title:Hyperfine Interactions
language:en
Short-container-title:Hyperfine Interact

Author:

Estreicher Stefan K.

Publisher

Springer Science and Business Media LLC

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/BF02068957.pdf

Reference46 articles.

1. Most recent reviews: S.M. Myers, M.I. Baskes, H.K. Birnbaum, J.W. Corbett, G.G. DeLeo, S.K. Estreicher, E.E. Haller, P. Jena, N.M. Johnson, R. Kirchheim, S.J. Pearton, and M.J. Stavola, Rev. Mod. Phys.64 (1992) 559; S.J. Pearton, J.W. Corbett, and M. Stavola,Hydrogen in Crystalline Semiconductors (Springer-Verlag, Berlin, 1992);Hydrogen in Compound Semiconductors, ed. S.J. Pearton (Trans Tech Publ., to be published).

2. Inc-Si, shallow acceptor passivation was first reported by C.-T. Sah, J.Y.-C. Sun, and J.J.-T. Tzou, Appl. Phys. Lett.43 (1983) 204; and J.I. Pankove, D.E. Carlson, J.E. Berkeyheiser, and R. O. Wance, Phys. Rev. Lett.51 (1983) 2224.

3. InSi, shallow donor passivation was first reported by N.M. Johnson, C. Herring, and D.J. Chadi, Phys. Rev. Lett.56 (1986) 769 and N.M. Johnson and S.K. Hahn, Appl. Phys. Lett.48 (1986) 709.

4. The passivation by hydrogen of the deep levels ofAu inc-Si was reported by S.J. Pearton and A.J. Tavendale, Phys. Rev. B26 (1982) 7105.

5. The activation byH of substitutionalC andSi inGe was first reported by R.N. Hall, IEEE Trans. Nucl. Sci.NS-21 (1974) 260 and IOP Conf. Ser.23 (1975) 190. See also E.E. Haller, B. Joós, and L.M. Falicov, Phys. Rev. B21 (1980) 4729.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum diffusion of isotropic muonium, MuT, in a 13C diamond;Diamond and Related Materials;2004-04

2. Hydrogen in wide bandgap semiconductors;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

3. Hydrogen in Wide Bandgap Semiconductors;Processing of Wide Band Gap Semiconductors;2000

4. GaN: Processing, defects, and devices;Journal of Applied Physics;1999-07

5. Johnson, Herring, and Van de Walle Reply:;Physical Review Letters;1995-05-29

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