1. A. R. Brown, D. M. de Leeuw, E. E. Havinga, and A. Pomp,Synthetic Met. 68, 65 (1994).
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony,J. Appl. Phys. 89, 5243 (2001).
3. H.-J. Cho, C. S. Kang, K. Onishi, S. Gopalan, R. Nieh, R. Choi, E. Dharmarajan, and J. C. Lee,Tech. Dig.-Int. Electron Devices Meet. (eds. J. Hoyt, S. Ikeda, and L. Lunardi), p. 655, The Institute of Electrical and Electronics Engineers. Inc., Washington DC, USA (2001).
4. V. Misra, G. Lucovsky, and G. Parsons,MRS Bull. 27, 212 (2002).
5. K. J. Choi, W. C. Shin, J. B. Park, and S. G. Yoon,Integr. Ferroelectr. 38, 191 (2001).