1. D. Flandre, A. Terao, P. Francis, B. Gentinne and J.-P. Colinge, “Demonstration of The Potential of Accumulation-Mode MOS Transistors on SOI Substrates for High-Temperature Operation (150–300C),” IEEE Elec. Dev. Let, Vol. 14, No. 1, pp. 10–12, Jan. 1993.
2. O. Faynot, S. Cristoloveanu, A. J. Auberton-Herve and C. Raynaud, “Performance and Potential of Ultrathin Accumulation-Mode SIMOX MOSFET’s,” IEEE Trans. Elec. Dev., Vol. 42, No. 4, pp. 713–719, Apr. 1995.
3. A. Acovic, L. K. Wang, F. Brady, and N. Haddad, “Hot-Carrier Reliability of Fully Depleted Accumulation Mode SOI MOSFETs,” SOI Conf. Dig., pp. 134–135, 1992.
4. Q. Tong, X. Xu and H. Zhang, “Elimination of Kink Effect in Fully Depleted Complementary Buried-Channel SOI MOSFET (FD CBCMOS) Based on Silicon Direct Bonding Technology,” IEEE Elec. Dev. Let, Vol. 12, No. 3, pp. 101–103, Mar. 1991.
5. L. K. Wang, J. Seliskar, T. Bucelot, A. Edenfeld and N. Haddad, “Enhanced Performance of Accumulation Mode 0.5um CMOS/SOI Operated at 300K and 85K,” IEDM Dig., pp. 679–682, 1991.