Steady-State and Non-Steady-State Characterization of MOS Devices-Reference-Cited by-同舟云学术

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Steady-State and Non-Steady-State Characterization of MOS Devices

Published:1979 Issue: Volume: Page:149-199
ISSN:
Container-title:Nondestructive Evaluation of Semiconductor Materials and Devices
language:
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Author:

Simmons John G.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4757-1352-7_4

Reference34 articles.

1. C.G.B Garrett and W.H. Brattain, Phys. Rev. 99, 376 (1955).

2. R. Lindner, Bell Syst. Tech. J. 41, 830 (1962).

3. L.M. Terman, Solid-St. Electron. 5, 285 (1962).

4. K. Lehovec, A. Slobodskoy and J.L. Sprague, Phys. Status Solidi, 3, 447 (1963).

5. F. P. Heiman and G. Warfield, IEEE Trans. Electron Devices ED-12, 165 (1965).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Toward Modelling Correlated DLTS Spectra from Al/Plasma Oxide/Semi-Insulating GaAs(Cr) Devices;Physica Status Solidi (a);1993-01-16

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