Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-K gate dielectric impacts on the inversion charge density-Reference-Cited by-同舟云学术

Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-K gate dielectric impacts on the inversion charge density

Published:2011-04 Issue:4 Volume:76 Page:657-666
ISSN:0304-4289
Container-title:Pramana
language:en
Short-container-title:Pramana - J Phys

Author:

MAO LING-FENG

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s12043-011-0052-0.pdf

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5. S K Ray, R Mahapatra and S Maikap, J. Mater. Sci.: Mater. Electron. 17, 689 (2006)

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