Solution with third-order accuracy for the electron distribution function in weakly ionized gases and intrinsic semiconductors-Reference-Cited by-同舟云学术

Solution with third-order accuracy for the electron distribution function in weakly ionized gases and intrinsic semiconductors

Published:1980-02 Issue:2 Volume:55 Page:375-384
ISSN:1826-9877
Container-title:Il Nuovo Cimento B Series 11
language:en
Short-container-title:Nuov Cim B

Author:

Cavalleri G.,Bonalumi R.

Publisher

Springer Science and Business Media LLC

Subject

General Medicine

Link

http://link.springer.com/content/pdf/10.1007/BF02739167.pdf

Reference16 articles.

1. L. Boltzmann:Sitzungber. Akad. Wiss. Wien, p. II,66, 275 (1872).

2. F. B. Pidduck:Proc. London Math. Soc.,15, 89 (1916);Quart. J. Math.,7, 199 (1936). See alsoL. G. Huxley andR. W. Crompton:The Diffusion and Drift of Electrons in Gases, sect.1, 11 (New York, N. Y., 1974), p. 23.

3. M. J. Druyvesteyn:Physica (The Hague),10, 69 (1930).

4. B. Davydov:Phys. Z. Sowjetunion,8, 59 (1935).

5. B. M. Morse, W. P. Allis andE. S. Lamar:Phys. Rev.,48, 412 (1935).

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3. Solution with Third-order Accuracy for the Electron Distribution Function in Weakly Ionized Gases (or in Intrinsic Semiconductors): Application to the Drift Velocity;Australian Journal of Physics;1981

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