Investigation of transient response on reconfigurable ringFET exposed to heavy-ion radiation strikes using 3D numerical device simulations
Author:
Publisher
Springer Science and Business Media LLC
Subject
Applied Mathematics,Electrical and Electronic Engineering
Link
https://link.springer.com/content/pdf/10.1007/s00202-023-01833-3.pdf
Reference41 articles.
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4. Yousoff LG (2016) Vertical silicon nanowire field effect transistors with nanoscale gate-all-around. Nanoscale Res Lett 11:210
5. Daniel Tekleab D (2014) Device performance of silicon nanotube field effect transistor. IEEE Electron Device Lett 35(5):506–508
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