1. O. Axelsson and N. Munksgaard.A class of preconditioned conjugate gradient methods for the solution of a mixed finite-element discretization of the biharmonic operator. Int. J. Numer. Math. Eng., 14: 1001–1019, 1978.
2. R. E. Bank, J. Bürgler, W. M. Coughran, Jr.., W. Fichtner, and R. K. Smith.Recent progress in algorithms for semiconductor device simulation. In R. Bulirsch, editor,Proceedings of the 1988Oberwolfach Confernce on VLSI Modeling.Birkhäuser Verlag, Basel, 1989.to appear.
3. R. E. Bank, W. M. Coughran, Jr., M. A. Driscoll, R. K. Smith, and W. Fichtner.Iterative methods in semiconductor device simulation. Computer Phys. Comm., 53: 210–212, 1989.
4. R. E. Bank, W. M. Coughran, Jr., W. Fichtner, D. J. Rose, and R. K. Smith.Computational aspects of transient device simulation. In W. L. Engl, editor,Process and Device Simulation, pp. 229–264. North-Holland, Amsterdam, 1986.
5. R. E. Bank and D. J. Rose.Global approximate Newton methods. Numer. Math., 37: 279–295, 1981.