1. B.A. Unvala, “Epitaxial Growth of Silicon by Vacuum Evaporation,” Nature, 194 (1962), p. 966.
2. R.N. Thomas and M.H. Francombe, “Low-Temperature Epitaxial Growth of pn Junctions by UHV Sublimation,” Appl. Phys. Lett., 13 (1968), p. 270.
3. J.C. Bean, “Growth of Doped Silicon Layers by Molecular Beam Epitaxy,” Impurity Doping Processes in Silicon, ed. F.F.Y. Wang (Amsterdam, the Netherlands: North-Holland, 1981), ch. 4.
4. Y. Ota, “Silicon Molecular Beam Epitaxy,” Thin Solid Films, 106 (1983), p. 3.
5. Y. Shiraki, “Silicon Molecular Beam Epitaxy,” Prog. Crystal Growth Charact., 12 (1986), p. 45.