The rapid thermal processing chemical vapor deposition of silicon epitaxial films-Reference-Cited by-同舟云学术

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The rapid thermal processing chemical vapor deposition of silicon epitaxial films

Published:1991-10 Issue:10 Volume:43 Page:38-43
ISSN:1047-4838
Container-title:JOM
language:en
Short-container-title:JOM

Author:

Jung K. H.,Hsieh T. Y.,Kwong D. L.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF03222692.pdf

Reference43 articles.

1. J. Manoliu et al., IEEE Electron Dev. Lett., EDL-4 (1983), p. 233.

2. A.G. Lewis, IEEE Trans. Electron Dev., ED-31 (1984), p. 1472.

3. D. Takacs et al., EDM Technical Digest (1983), p. 159.

4. A.S. Grove, A. Roder, and C.T. Sah, J. Appl. Phys., 36 (1963), p. 1065.

5. G. Srinivasan, J. Electrochem. Soc., 127 (1980), p. 1334.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon Device Processing;Materials Science and Technology;2013-02-15

2. Study of Rapid Thermal Precleaning for Si Epitaxial Growth;Journal of The Electrochemical Society;1992-07-01

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