Energy Consumption, Conversion, and Transfer in Nanometric Field-Effect Transistors (FET) Used in Readout Electronics at Cryogenic Temperatures-Reference-Cited by-同舟云学术

Energy Consumption, Conversion, and Transfer in Nanometric Field-Effect Transistors (FET) Used in Readout Electronics at Cryogenic Temperatures

Published:2020-01-27 Issue:1-2 Volume:199 Page:171-181
ISSN:0022-2291
Container-title:Journal of Low Temperature Physics
language:en
Short-container-title:J Low Temp Phys

Author:

López-López O.^ORCID,Martínez I.,Cabrera A.,Gutiérrez-D E. A.,Ferrusca D.,Durini D.,De la Hidalga-Wade F. J.,Velazquez M.,Huerta O.,Kruth A.,Degenhardt C.,Artanov A.,van Waasen S.

Funder

Consejo Nacional de Ciencia y Tecnología

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/s10909-020-02340-6.pdf

Reference8 articles.

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4. E.A. Gutiérrez-D, M.J. Deen, C.L. Claeys, Low Temperature Electronics, Physics, Devices, Circuits, and Applications (Academic Press, Cambridge, 2001), pp. 26–36

5. G.A. Rodriguez-R, E.A. Gutierrez-D et al., Thermo-magnetic effects in nano-scaled Mosfet: an experimental, modeling, and simulation approach. IEEE J. Electron. Dev. Soc. 3(2), 78–84 (2015). https://doi.org/10.1109/jeds.2015.2390629

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