Porosity model for flows in CMP

Author:

Zhang Chao-hui,Ye Wei,Luo Jian-bin,Wen Shi-zhu

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering

Reference13 articles.

1. Lei H, Luo J B, Pan G S, et al, Chemical mechanical polishing of computer hard disk substrate in colloidal SiO2 slurry, International Journal of Nonlinear Science and Numerical Simulation, 2002, 3(3–4): 455–459

2. Braun A E, CMP becomes gentler, more efficient, Semiconductor Int, 2001(11): 54–66

3. Levert J A, Mess F M, Salant R F, Mechanisms of chemical-mechanical polishing of SiO2 dielectric on integrated circuits, Tribol Trans, 1998, 41(4): 593–599

4. Tichy J, Levert J A, Shan L, et al, Contact mechanics and lubrication hydrodynamics of chemical mechanical polishing, J Electrochem Soc, 1999, 146(4): 1 523–1 528

5. Hooper B J, Byrne G, Galligan S, Pad conditioning in chemical mechanical polishing, J Materials Processing Technology, 2002, 123: 107–113

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