Preparation and optoelectronic properties of a-IGZO thin films deposited by RF magnetron sputtering at different working pressures-Reference-Cited by-同舟云学术

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Preparation and optoelectronic properties of a-IGZO thin films deposited by RF magnetron sputtering at different working pressures

Published:2014-06-17 Issue:7 Volume:37 Page:599-603
ISSN:1001-0521
Container-title:Rare Metals
language:en
Short-container-title:Rare Met.

Author:

Ma Rui-Xin,Xiao Yu-Qin,Li Shi-Na,Wang Yuan-Yuan,Li Dong-Ran,He Liang-Wei

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Metals and Alloys,Physical and Theoretical Chemistry,Condensed Matter Physics

Link

http://link.springer.com/content/pdf/10.1007/s12598-014-0314-3.pdf

Reference17 articles.

1. Klauk H. Organic thin-film transistors for flexible displays and circuits. In: Proceedings of the 70th Device Research Conference, Pennsylvania, 2012. 237.

2. Wang BX, Kong WM, Ling AP, Bao Y, Zhang J, She JQ. Performance of TiC/a-C: H thin film. Chin J Rare Met. 2013;37(3):378.

3. Lee SS, Mativetsky JM, Loth MA, Anthony JE, Loo YL. Quantifying resistances across nanoscale low-and high-angle interspherulite boundaries in solution-processed organic semiconductor shin films. ACS Nano. 2012;6(11):9879.

4. Wood R, Bruce I, Moon CB, Kim WY, Mascher P. Modeling of spiking analog neural circuits using organic semiconductor thin film transistors with silicon oxide nitride semiconductor gates. Org Electron. 2012;13(12):3254.

5. Chan I, Moradi M, Sazonov A, Nathan A. 150 °C amorphous silicon thin film transistors with low-stress nitride on transparent plastic. J Disp Technol. 2011;7(1):36.

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2. Influence of thermal treatment duration on the morphological and optical properties of a-IGZO;Journal of Materials Science: Materials in Electronics;2023-06

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