Spin coating-Co-reduction approach: A general strategy for preparation of oriented chalcogenide thin film on arbitrary substrates-Reference-Cited by-同舟云学术

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Spin coating-Co-reduction approach: A general strategy for preparation of oriented chalcogenide thin film on arbitrary substrates

Published:2011-03 Issue:S1 Volume:30 Page:651-656
ISSN:1001-0521
Container-title:Rare Metals
language:en
Short-container-title:Rare Metals

Author:

Zhao Yue,Liu Hong,Qin Haiming,Chu Xinjun,Wang Xuesen,Wang Xin,Cai Kefeng,Liu Duo,Wang Chunlei,Wang Jiyang

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Metals and Alloys,Physical and Theoretical Chemistry,Condensed Matter Physics

Link

http://link.springer.com/content/pdf/10.1007/s12598-011-0365-z.pdf

Reference29 articles.

1. Xu R., Husmann A., Rosenbaum T.F., Saboungi M.L., Enderby J.E., and Littlewood P.B., Large magnetoresistance in non-magnetic silver chalcogenides, Nature 1997, 390: 57.

2. Thornburg, D.D., Memory switching in a type I amorphous chalcogenide, J. Electron. Mater. 1973, 2: 3.

3. Nakayama K., Kitagawa T., Ohmura M., and Masakuni S., Nonvolatile memory based on phase transition in chalcogenide thin film. Jpn. J. Appl. Phys., 1993, 32: 564.

4. Stocker H.J., Bulk and thin film switching and memory effects in semiconducting chalcogenide glasses, Appl. Phys. Lett., 1969, 15: 55.

5. Kyratsi T., Chrissafis K., Wachter J., Paraskevopoulos K.M., and Kanatzidis M.G., KSb5S8: A wide bandgap phase-change material for ultra high density rewritable information storage, Adv. Mater., 2003, 15: 1428.

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