Tailoring thermoelectric properties of Zr0.43Hf0.57NiSn half-Heusler compound by defect engineering
Author:
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Metals and Alloys,Physical and Theoretical Chemistry,Condensed Matter Physics
Link
https://link.springer.com/content/pdf/10.1007/s12598-020-01392-7.pdf
Reference50 articles.
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2. Uher C, Yang J, Hu S, Morelli D, Meisner G. Transport properties of pure and doped MNiSn (M = Zr, Hf). Phys Rev B. 1999;59(13):8615.
3. Shen Q, Chen L, Goto T, Hirai T, Yang J, Meisner G, Uher C. Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds. Appl Phys Lett. 2001;79(25):4165.
4. Gałązka K, Populoh S, Xie W, Yoon S, Saucke G, Hulliger J, Weidenkaff A. Improved thermoelectric performance of (Zr0.3Hf0.7)NiSn half-Heusler compounds by Ta substitution. J Appl Phys. 2014;115(18):183704.
5. Ogut S, Rabe K. Band gap and stability in the ternary intermetallic compounds NiSnM (M = Ti, Zr, Hf): a first-principles study. Phys Rev B. 1995;51(16):10443.
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