Compensation mechanisms in nominally undoped semi-insulating InP and comparison with undoped InP grown under stoichiometry control-Reference-Cited by-同舟云学术

Compensation mechanisms in nominally undoped semi-insulating InP and comparison with undoped InP grown under stoichiometry control

Published:1991-12 Issue:12 Volume:20 Page:1065-1068
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Hirt G.,Hofmann D.,Mosel F.,Schäfer N.,Müller G.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF03030208.pdf

Reference22 articles.

1. E. W. A. Young and G. M. Fontijn, J. Appl. Phys.56, 146 (1990).

2. D. Hofmann, G. Müller and N. Streckfuß, Appl. Phys. A48, 315 (1989).

3. G. Müller, D. Hofmann, P. Kipfer and F. Mosel, Proc. of 2nd Int. Conf. on InP and Rel. Mat. 21 (1990).

4. P. Kipfer, D. Hofmann, F. Mosel, G. Müller, A. Schöner and G. Pensl, 1990 Semi-insulating III–V Materials (Toronto), eds. A. Milnes and C. J. Miner, IOP Publishing (Bristol, U.K.), 11 (1990).

5. O. Oda, K. Kainosho, K. Kohiro, R. Hirano, H. Shimakura, T. Inoue, H. Yamamoto and T. Fukui, to be published in Proc. of 3rd Int. Conf. on InP and Rel. Mat, Cardiff, UK (1991).

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