On the density of localized levels in amorphous silicon-Reference-Cited by-同舟云学术

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On the density of localized levels in amorphous silicon

Published:1979-04 Issue:4 Volume:18 Page:427-429
ISSN:0340-3793
Container-title:Applied Physics
language:en
Short-container-title:Appl. Phys.

Author:

Hoffmann H. -J.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,General Engineering

Link

http://link.springer.com/content/pdf/10.1007/BF00899699.pdf

Reference2 articles.

1. A.Madan, P.G.Le Comber, W.E.Spear: J. non-crystalline Solids20, 239 (1976)

2. W.E.Spear, P.G.LeComber: Phil Mag.33, 935 (1976)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Doping and impurity compensation by ion implantation in a-SiGe films;Semiconductors;1998-10

2. Neutron transmutation doping of silicon and other semiconducting materials;Journal of Applied Physics;1981-06

3. Thermally Stimulated Currents in Amorphous Silicon;physica status solidi (b);1980-03-01

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