Effect of Ar partial pressure and substrate temperature of CaLa4(Zr0.05Ti0.95)4O15 dielectric films-Reference-Cited by-同舟云学术

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Effect of Ar partial pressure and substrate temperature of CaLa4(Zr0.05Ti0.95)4O15 dielectric films

Published:2019-03-18 Issue:1 Volume:28 Page:77-82
ISSN:0946-7076
Container-title:Microsystem Technologies
language:en
Short-container-title:Microsyst Technol

Author:

Hsu Cheng-Hsing,Chen Wen-Shiush,Tseng Ching-Fang,Lin Jenn-Sen,Chou Po-Heng,Lin Yu-Ju

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s00542-019-04400-8.pdf

Reference17 articles.

1. Cole MW, Joshi PC, Ervin MH, Wood MC, Pfeffer RL (2000) The influence of Mg doping on the materials properties of Ba1−xSrxTiO3 thin films for tunable device applications. Thin Solid Films 374:34–41

2. Cole MW, Joshi PC, Ervin MH (2001) La doped Ba1-xSrxTiO3 thin films for tunable device applications. J Appl Phys 89:6336–6340

3. Cullity BD (1978) Elements of X-ray diffraction. Addison-Wesley, Massachusetts

4. Gao XF, Qiu T (2010) Microwave dielectric properties of Ba6–3xLa8+2x(Ti1–zZrz)18O54 (x = 2/3) ceramics. J Rare Earths 28:411–415

5. Hsu CH, Chang CH (2014) Effect of Zr substitution on the microwave dielectric properties of (Ca0.8Sr0.2)TiO3 ceramics. Mater Res Bull 50:103–107

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