Electrostatic tuning in linear regime for 25.9-MHz micromechanical resonator with 120-nm capacitive gap-Reference-Cited by-同舟云学术

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Electrostatic tuning in linear regime for 25.9-MHz micromechanical resonator with 120-nm capacitive gap

Published:2016-09-25 Issue:7 Volume:23 Page:2789-2795
ISSN:0946-7076
Container-title:Microsystem Technologies
language:en
Short-container-title:Microsyst Technol

Author:

You Weilong,Zhang Lei,Wang Xiaofei,Wei Wenshan,Xia Weifeng,Yang Heng,Li Xinxin

Funder

Science and Technology Commission of Shanghai Municipality

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s00542-016-3136-4/fulltext.html

Reference29 articles.

1. Agrawal DK, Woodhouse J, Seshia AA (2013) Modeling nonlinearities in mems oscillators. IEEE Trans Ultrason Ferroelectr Freq Control 60(8):1646–1659. doi: 10.1109/TUFFC.2013.2747

2. Amini BV, Pourkamali S, Ayazi F (2006) A high resolution, stictionless, CMOS compatible SOI accelerometer with a low noise, low power, 0.25 μm CMOS interface. IEEE MEMS‘04, pp 572–575. Doi: 10.1109/MEMS.2004.1290649

3. Ayazi F, Najafi K (2000) High Aspect-ratio combined poly and single-crystal silicon (HARPSS) MEMS Technology. J Microelectromech Syst 9(3):288–294. doi: 10.1109/84.870053

4. Bao M (2005) Analysis and design principles of MEMS devices. Elsevier, Amsterdam

5. Chen Y, Ng EJ, Yang Y, Ahn CH, Flader I, Kenny TW (2015) In-situ ovenization of Lamé-mode silicon resonators for temperature compensation IEEE MEMS, Estoril, Portugal, pp 809–812. doi: 10.1109/MEMSYS.2015.7051082

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