Author:
Schjølberg-Henriksen Kari,Tvedt Lars Geir Whist,Gjelstad Stein Are,Mørk Christopher,Moe Sigurd T.,Imenes Kristin,Poppe Erik,Wang Dag T.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Ahn KY, Stengl R, Tan TY, Gösele U, Smith P (1990) Growth, shrinkage, and stability of interfacial oxide layers between directly bonded silicon wafers. Appl Phys A 50:85–94
2. Bengtsson S (1992) Semiconductor wafer bonding: a review of interfacial properties and applications. J Electron Mater 21(8):841–862
3. Bengtsson S, Engström O (1989) Interface charge control of directly bonded silicon structures. J Appl Phys 66(3):1231–1239
4. Kub FJ, Hobart KA, Desmond CA (1998) Electrical characterization of low temperature direct silicon-silicon bonding for power device applications. In: Gösele U, Baumgart H, Abe T, Hunt C, Iyer A (eds) Semiconductor wafer bonding: science, technology, and applications IV. The Electrochemical Society, Pennington, pp 466–472
5. Ljungberg K, Söderbärg A, Bengtsson S, Jauhiainen A (1994) Characterization of spontaneously bonded hydrophobic silicon surfaces. J Electrochem Soc 141(2):562–566
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献