Probing performance of p-GaAsP/i-GaAs/n-GaAsP solar cells through compositional and geometrical variations
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s00542-023-05456-3.pdf
Reference18 articles.
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2. Chaujar R, Pandey R (2016) Novel back-contact back junction SiGe (BC-BJ SiGe) solar cell for improved power conversion efficiency. Microsyst Technol 22:2673–2680
3. Fan S, Yu Z, Sun Y, Weigand W, Dhingra P, Kim M, Hool R, Ratta E, Holman Z, Lee M (2019) 20%-efficient epitaxial GaAsP/Si tandem solar cells. Sol Energy Mater Sol Cells 202:110144
4. Kim H, Kim K, Guan Y, Lee J, Kuech T, Mawst L (2018) Single junction solar cell employing strain compensated GaAs0.965Bi0.035/ GaAs0.75P0.25multiple quantum wells grown by metal organic vapor phase epitaxy. Appl Phys Lett 112:251105
5. KoTamraju S, Sukeerthi M, Puthanveettil S (2019) Modeling of InGaP/InGaAs-GaAsP/Ge multiple quantum well solar cell to improve efficiency for space applications. Sol Energy 186:328–334
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